Semiconductors

Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters...

eGaN® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good...

Pushing Hall Effect Technology to New Limits
Reducing energy consumption and improving efficiency are targeted outcomes for most power electronics...

eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the...

Basics of Dual Fractional-N Synthesizers/PLLs
Over the years, a number of methods have been proposed to realize fractional-N frequency synthesis that...

The Risk Assessment Process
When undertaking machine safety activities, it is always important to have a clearly structured process...
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