Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gallium nitride transistors. One very typical application is a 26 W, 48 V to 5 V , Power over Ethernet Powered Device (PoE-PD).
A simplified forward converter schematic for this application using eGaN FETs and Linear Technology's LT1952in conjunction with the manufacturer's LTC3900 synchronous rectifier controller on the secondary side.
Download this whitepaper to learn more.
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Related Categories: Inductors, Power, Semiconductors
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