Dead-Time Optimization for Maximum Efficiency
In this white paper EPC continues our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN® FETs and MOSFETs.
Previously published articles showed that eGaN FETs behave similarly to silicon devices and can be evaluated using the same performance metrics. Although eGaN FETs perform significantly better by most metrics, the eGaN FET ‘body-diode' forward voltage is higher than its MOSFET counterpart and can be a significant loss component during dead-time.
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Related Categories: Power, Semiconductors
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