Swissbit Flash Products Reliability & Data Integrity Managing Read Disturb Effects Data Retention Endurance
NAND Flash chips are organized in Pages (2…16kB+spare) and Blocks (typically 64 pages). A page can be programmed once or up to four times, but only a full block can be erased at the same time.
During program and erase operation the electrons are “pressed” (tunneled) through an insulator into or out of the memory cell by applying a relatively large voltage. Each of these program and erase operations causes a slight damage to the insulator which gradually shortens the data retention of the cell.
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